Characterization of Grain Boundaries in Graphene by Raman Spectroscopy

Abstract

Abstract: The graphene films prepared by chemical vapor deposition are typically polycrystalline, and the grain boundaries are expected to degrade the electrical and thermal properties of the resulting films. The study of graphene grains and their boundary is therefore critical for enabling diverse applications. In this work, thermal treatment has been applied to introduce defects on the transferred graphene films. It is found that the intensity of Raman D peak at the edge of graphene and the grain boundary are significantly enhanced after heat treatment in air, whereas no change was found in D peak within the graphene grain. Therefore, the grain boundary distribution of the graphene films can be characterized by thermal treatment combined with Raman spectroscopy-scanning technique, which provides a rapid and effective method to identify the graphene grains on arbitrary substrates.

Key words: graphene, Raman spectrum, grain boundary, defects, CVD

CLC Number:

O484.1

Li Xiuting, Ying Hao, Chen Shanshan. Characterization of Grain Boundaries in Graphene by Raman Spectroscopy[J]. JOURNAL OF QUJING NORMAL UNIVERSITY, 2017, 36(6): 18-23.

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