Synthesis of Two-dimensional Hexagonal Boron Nitride by Atmospheric Pressure Chemical Vapor Deposition

Abstract

Abstract: Atmospheric pressure chemical vapor deposition is one of the common ways of synthesizing two-dimensional h-BN. Various growth parameters including the electropolishing of metal substrate, the distance between substrate and precursor, the precursor heating temperature as well as the growth temperature are systematically studied to obtain a better understanding of the h-BN growth dynamics. High quality monolayer h-BN film is finally achieved through the optimized growth parameters.

Key words: atmospheric pressure chemical vapor deposition, hexagonal boron nitride, two-dimensional materials, atomic layer

CLC Number:

O484.1

Yao Qian, Chen Shanshan. Synthesis of Two-dimensional Hexagonal Boron Nitride by Atmospheric Pressure Chemical Vapor Deposition[J]. JOURNAL OF QUJING NORMAL UNIVERSITY, 2017, 36(3): 23-29.

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