Journal of Qujing Normal University ›› 2021, Vol. 40 ›› Issue (3): 22-28.

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Study of Magnetic Properties of Ni-Mn-Ga Thin Films Epitaxially Grown at Different Temperatures and Applied Magnetic Field Directions

JIANG Zhongsheng, YANG Bo, YAN Haile, LI Zongbin   

  1. Key Laboratory of Material Anisotropy and Weave, School of Material Science and Engineering, Ministry of Education, Northeastern University, Shenyang Liaoning 110819, China
  • Received:2021-04-26 Online:2021-05-26 Published:2021-07-13

Abstract: Epitaxially grown Ni-Mn-Ga Hassler alloy thin films have a variety of excellent magnetron functional behaviors and are promising candidates for smart sensing drives and new solid-state refrigeration. In this study, epitaxially grown Ni-Mn-Ga thin films were prepared on MgO(001) single crystal substrates using magnetron sputtering, and X-ray diffraction and microstructure characterization results showed that they were seven-layer modulated structured martensite at room temperature. By measuring the hysteresis lines of the epitaxially grown Ni-Mn-Ga films on MgO(001) substrates at different temperatures and magnetic field directions, it was found that when the temperature was below 330 K, a significant “magnetic moment jump” phenomenon (sudden change of magnetization intensity) could be observed in the hysteresis lines, and the phenomenon became more pronounced as the temperature decreased. When the temperature is higher than 335 K, the hysteresis line of the film is the hysteresis line of the conventional magnetic material, which means that the “moment jump” phenomenon exists only in the martensitic state. By studying the hysteresis lines in different directions of the applied magnetic field, we found that the “moment jump” phenomenon in the hysteresis lines of thin films is also very sensitive to the direction of the applied magnetic field, and only when the applied magnetic field is close to the [100] or [010] direction of the MgO single-crystal substrate, the hysteresis lines of thin films will have obvious “moment jump” phenomenon. The “magnetic moment jump” phenomenon is only apparent when the applied magnetic field is close to the [100] or [010] direction of the MgO single crystal substrate.

Key words: epitaxially grown Ni-Mn-Ga thin films, magnetization behavior, magnetic field-induced martensitic variable weight orientation, thermal-magnetic curve, hysteresis line

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