曲靖师范学院学报 ›› 2019, Vol. 38 ›› Issue (6): 20-25.

• 物理、化学研究 • 上一篇    下一篇

ZnNb2O6材料光电学特性研究

刘东豪, 闫宇星, 沈静秋, 罗祖君   

  1. 曲靖师范学院 化学与环境科学学院,云南 曲靖 655011
  • 收稿日期:2019-09-17 出版日期:2019-11-26
  • 作者简介:刘东豪,曲靖师范学院化学与环境科学学院本科生,主要从事半导体光电材料研究.

Electrobic Structure and Optical Properties of ZnNb2O6

Liu Donghao, Yan Yuxing, Shen jingqiu, Luo Zujun   

  1. School of Chemistry and Environmental Science,Qujing Normal University, Qujing Yunnan 655011,China
  • Received:2019-09-17 Published:2019-11-26
  • Supported by:
    云南省教育厅科学研究基金项目“锂-空气电池中钙钛矿介孔结构阴极催化剂制备及电化学特性研究” (2017ZDX148).

摘要: 采用第一性原理平面波超软赝势方法计算了ZnNb2O6的电子结构和光学性质,并从理论上分析了它们之间的关系.能带结构计算表明ZnNb2O6属于间接带隙半导体,禁带宽度为3.51eV;总态密度主要源于Zn3d、Nb4d以及O2p层电子的态密度;进一步对ZnNb2O6材料的光学性质计算,表明带间跃迁占主导地位,吸收系数最大峰值为3.02×105cm-1.理论计算得到的结果与实验结果一致,可以为ZnNb2O6材料的应用提供理论支持.

关键词: ZnNb2O6, 能带结构, 光学性质, 第一性原理

Abstract: A first-Principle calculation using the plane-wave ultrasoft pseudopotential method is performed to study the optical properties and electronic structure of ZnNb2O6.and their relationship is theoretically analyzed. The results indicate that:(1) ZnNb2O6 is a indirect band gap semiconductor and the band gap is 3.51eV.The density of states is mainly composed of O 2p,Zn3d and Nb4d. (2) The valences electronic state of ZnNb2O6 is asymmetric and has a strong local feature.These have an significant effect on the electronic structure and the bonding chararcteristics of ZnNb2O6. (3) The biggest peak of absorption is 3.02×105cm-1. The extinction coefficient has strong absorption characteristics near the band edge, and the mechanism of ZnNb2O6 electrical and optical properties dominated by the transition of electrons is analyzed, and its structure and state are analyzed. provide a theoretical basis for the application of ZnNb2O6.

Key words: ZnNb2O6, band structure, optical properties, first-principles

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