不同温度及外加磁场方向外延生长Ni-Mn-Ga薄膜的磁性能研究

曲靖师范学院学报 ›› 2021, Vol. 40 ›› Issue (3): 22-28.

不同温度及外加磁场方向外延生长Ni-Mn-Ga薄膜的磁性能研究

姜钟生, 杨波, 闫海乐, 李宗宾

东北大学材料科学与工程学院材料各向异性与织构教育部重点实验室,辽宁沈阳 110819

收稿日期:2021-04-26 出版日期:2021-05-26 发布日期:2021-07-13
通讯作者: 杨波,东北大学材料科学与工程学院副教授,主要从事铁磁形状记忆合金薄膜晶体学与磁性能研究.
作者简介:姜钟生,东北大学材料科学与工程学院在读硕士研究生,主要从事铁磁形状记忆合金薄膜的制备与磁性能研究.
基金资助:
国家自然科学面上基金“外延生长Ni-Mn-Ga薄膜的马氏体相变与磁化行为机理研究”（52071071）.

Study of Magnetic Properties of Ni-Mn-Ga Thin Films Epitaxially Grown at Different Temperatures and Applied Magnetic Field Directions

JIANG Zhongsheng, YANG Bo, YAN Haile, LI Zongbin

Key Laboratory of Material Anisotropy and Weave, School of Material Science and Engineering, Ministry of Education, Northeastern University, Shenyang Liaoning 110819, China

Received:2021-04-26 Published:2021-05-26 Online:2021-07-13

摘要/Abstract

摘要： 外延生长Ni-Mn-Ga哈斯勒合金薄膜具有多种优异的磁控功能行为,是智能传感驱动、新型固态制冷等领域中极具前景的候选材料.利用磁控溅射在MgO(001)单晶基板上制备出外延生长Ni-Mn-Ga薄膜,X射线衍射和微观组织表征结果显示其在室温下为七层调制结构马氏体.通过测量MgO(001)基板上外延生长Ni-Mn-Ga薄膜在不同温度和不同磁场方向的磁滞回线发现,当温度低于330 K时,在其磁滞回线上能够观察到明显的“磁矩跳跃”现象（磁化强度的突变）,并且随温度降低该现象越明显;当温度高于335 K时,薄膜的磁滞回线为常规磁性材料的磁滞回线,说明“磁矩跳跃”现象只存在于马氏体状态.通过研究不同施加磁场方向的磁滞回线发现,薄膜磁滞回线上的“磁矩跳跃”现象对外加磁场方向也非常敏感,只有当外加磁场靠近MgO单晶基板的[100]或[010]方向时,薄膜的磁滞回线才会存在明显的“磁矩跳跃”现象.

关键词: 外延生长Ni-Mn-Ga薄膜, 磁化行为, 磁场诱发马氏体变体重取向, 热-磁曲线, 磁滞回线

Abstract: Epitaxially grown Ni-Mn-Ga Hassler alloy thin films have a variety of excellent magnetron functional behaviors and are promising candidates for smart sensing drives and new solid-state refrigeration. In this study, epitaxially grown Ni-Mn-Ga thin films were prepared on MgO(001) single crystal substrates using magnetron sputtering, and X-ray diffraction and microstructure characterization results showed that they were seven-layer modulated structured martensite at room temperature. By measuring the hysteresis lines of the epitaxially grown Ni-Mn-Ga films on MgO(001) substrates at different temperatures and magnetic field directions, it was found that when the temperature was below 330 K, a significant “magnetic moment jump” phenomenon (sudden change of magnetization intensity) could be observed in the hysteresis lines, and the phenomenon became more pronounced as the temperature decreased. When the temperature is higher than 335 K, the hysteresis line of the film is the hysteresis line of the conventional magnetic material, which means that the “moment jump” phenomenon exists only in the martensitic state. By studying the hysteresis lines in different directions of the applied magnetic field, we found that the “moment jump” phenomenon in the hysteresis lines of thin films is also very sensitive to the direction of the applied magnetic field, and only when the applied magnetic field is close to the [100] or [010] direction of the MgO single-crystal substrate, the hysteresis lines of thin films will have obvious “moment jump” phenomenon. The “magnetic moment jump” phenomenon is only apparent when the applied magnetic field is close to the [100] or [010] direction of the MgO single crystal substrate.

Key words: epitaxially grown Ni-Mn-Ga thin films, magnetization behavior, magnetic field-induced martensitic variable weight orientation, thermal-magnetic curve, hysteresis line

中图分类号:

O469

姜钟生, 杨波, 闫海乐, 李宗宾. 不同温度及外加磁场方向外延生长Ni-Mn-Ga薄膜的磁性能研究[J]. 曲靖师范学院学报, 2021, 40(3): 22-28.

JIANG Zhongsheng, YANG Bo, YAN Haile, LI Zongbin. Study of Magnetic Properties of Ni-Mn-Ga Thin Films Epitaxially Grown at Different Temperatures and Applied Magnetic Field Directions[J]. Journal of Qujing Normal University, 2021, 40(3): 22-28.

参考文献

[1] MURRAY S J, MARIONI M, ALLEN S M, et al.6% magnetic-field-induced strain by twin-boundary motion in ferromagnetic Ni-Mn-Ga[J]. Applied Physics Letters, 2000, 77(06): 886-888.
[2] SOZINOV A, LIKHACHEV A A, LANSKA N, et al.Giant magnetic-field-induced strain in NiMnGa seven-layered martensitic phase[J]. Applied Physics Letters, 2002, 80(10): 1746-1748.
[3] SOZINOV A, LANSKA N, SOROKA A, et al.12% magnetic field-induced strain in Ni-Mn-Ga-based non-modulated martensite[J]. Applied Physics Letters, 2013, 102(02): 021902.
[4] RECARTE V, PÉREZ-LANDAZÁBAL J I, SÁNCHEZ-ALÁRCOS V, et al. Magnetocaloric effect linked to the martensitic transformation in sputter-deposited Ni-Mn-Ga thin films[J]. Applied Physics Letters, 2009, 95(14): 141908.
[5] SCHLEICHER B, NIEMANN R, SCHWABE S, et al.Reversible tuning of magnetocaloric Ni-Mn-Ga-Co films on ferroelectric PMN-PT substrates[J]. Scientific Reports, 2017, 7(01): 14462.
[6] FRANCO V, BLÁZQUEZ J S, IPUS J J, et al. Magnetocaloric effect: From materials research to refrigeration devices[J]. Progress in Materials Science, 2018, 93(Supplement C): 112-232.
[7] SCHWABE S, SCHLEICHER B, NIEMANN R, et al.Probing the Martensitic Microstructure of Magnetocaloric Heusler Films by Synchrotron Diffraction[J]. Energy Technology, 2018, 6(08): 1453-1462.
[8] WILSON S A, JOURDAIN R P J, ZHANG Q, et al. New materials for micro-scale sensors and actuators: An engineering review[J]. Materials Science and Engineering: Reports, 2007, 56(1-6): 1-129.
[9] AUERNHAMMER D, KOHL M, KREVET B, et al.Intrinsic position sensing of a Ni-Mn-Ga microactuator[J]. Smart Materials and Structures, 2009, 18(10): 104016.
[10] THOMAS M, HECZKO O, BUSCHBECK J, et al.Stray-Field-Induced Actuation of Free-Standing Magnetic Shape-Memory Films[J]. Advanced Materials, 2009, 21(36): 3708-3711.
[11] KOHL M, SCHMITT M, BACKEN A, et al.Ni-Mn-Ga shape memory nanoactuation[J]. Applied Physics Letters, 2014, 104(04): 043111.
[12] PLANES A, MANOSA L, MOYA X, et al.Magnetocaloric effect in Heusler shape-memory alloys[J]. Journal of Magnetism and Magnetic Materials, 2007, 310(02): 2767-2769.
[13] DE-OLIVEIRA N A, VON-RANKE P J, TROPER A. Magnetocaloric and barocaloric effects: Theoretical description and trends[J]. International Journal of Refrigeration-Revue Internationale Du Froid, 2014, 37: 237-248.
[14] LI Z B, ZHANG Y D, SANCHEZ-VALDES C F, et al. Giant magnetocaloric effect in melt-spun Ni-Mn-Ga ribbons with magneto-multistructural transformation[J]. Applied Physics Letters, 2014, 104(04): 5044101.
[15] BRUNO N M, CIOCANEL C, FEIGENBAUM H P, et al.A theoretical and experimental investigation of power harvesting using the NiMnGa martensite reorientation mechanism[J]. Smart Materials and Structures, 2012, 21(09): 094018.
[16] GUELTIG M, WENDLER F, OSSMER H, et al.High-Performance Thermomagnetic Generators Based on Heusler Alloy Films[J]. Advanced Energy Materials, 2017, 7(05): 201601879.
[17] GUELTIG M, OSSMER H, OHTSUKA M, et al.High Frequency Thermal Energy Harvesting Using Magnetic Shape Memory Films[J]. Advanced Energy Materials, 2014, 4(17): 1400751.
[18] WASKE A, DZEKAN D, SELLSCHOPP K, et al.Energy harvesting near room temperature using a thermomagnetic generator with a pretzel-like magnetic flux topology[J]. Nature Energy, 2019, 4(01): 68-74.
[19] FARSANGI M A A, COTTONE F, SAYYAADI H, et al. Energy harvesting from structural vibrations of magnetic shape memory alloys[J]. Applied Physics Letters, 2017, 110(10): 103905.
[20] KARAMAN I, BASARAN B, KARACA H E, et al.Energy harvesting using martensite variant reorientation mechanism in a NiMnGa magnetic shape memory alloy[J]. Applied Physics Letters, 2007, 90(17): 172505.
[21] STRAKA L, LANSKA N, ULLAKKO K, et al.Twin microstructure dependent mechanical response in Ni-Mn-Ga single crystals[J]. Applied Physics Letters, 2010, 96(13): 131903.
[22] ACET M, MANOSA L, PLANES A.Handbook of Magnetic Materials Chapter Four: Magnetic-Field-Induced Effects in Martensitic Heusler-Based Magnetic Shape Memory Alloys[M], Netherlands: Elsevier, 2011: 231-289.
[23] CHERNENKO V A, ANTON R L, KOHL M, et al.Magnetic domains in Ni-Mn-Ga martensitic thin films[J]. Journal of Physics: Condensed Matter, 2005, 17(34): 5215-5224.
[24] HECZKO O, THOMAS M, BUSCHBECK J, et al.Epitaxial Ni-Mn-Ga films deposited on SrTiO3 and evidence of magnetically induced reorientation of martensitic variants at room temperature[J]. Applied Physics Letters, 2008, 92(07): 072502.
[25] THOMAS M, HECZKO O, BUSCHBECK J, et al.Magnetically induced reorientation of martensite variants in constrained epitaxial Ni-Mn-Ga films grown on MgO(001)[J]. New Journal of Physics, 2008, 10(02): 023040.
[26] DIESTEL A, BACKEN A, NEU V, et al.Magnetic domain structure of epitaxial Ni-Mn-Ga films[J]. Scripta Materialia, 2012, 67(05): 423-426.
[27] DIESTEL A, NEU V, BACKEN A, et al.Magnetic domain pattern in hierarchically twinned epitaxial Ni-Mn-Ga films[J]. J Phys Condens Matter, 2013, 25(26): 266002.
[28] RANZIERI P, CAMPANINI M, FABBRICI S, et al.Achieving Giant Magnetically Induced Reorientation of Martensitic Variants in Magnetic Shape-Memory Ni-Mn-Ga Films by Microstructure Engineering[J]. Advanced Materials, 2015, 27(32): 4760-4766.
[29] LAPTEV A, LEBECKI K, WELKER G, et al.Origin of steps in magnetization loops of martensitic Ni-Mn-Ga films on MgO(001)[J]. Applied Physics Letters, 2016, 109(13): 132405.
[30] DURAK-YÜZÜAK G, YÜZÜAK E, HÜTTEN A. Tailoring the structural and magnetic properties of epitaxially growth Ni-Mn-Ga magnetic films by Fe addition[J]. Philosophical Magazine, 2019, 99(23): 2971-2983.
[31] TAKHSHA-GHAHFAROKHI M, CASOLI F, FABBRICI S, et al.Martensite-enabled magnetic flexibility: The effects of post-growth treatments in magnetic-shape-memory Heusler thin films[J]. Acta Materialia, 2020, 187: 135-145.
[32] XIE R, TANG S L, TANG Y M, et al.Transformation behaviors, structural and magnetic characteristics of Ni-Mn-Ga films on MgO (001)[J]. Chinese Physics B, 2013, 22(10): 107502.
[33] XIE R, WEI J, LIU Z W, et al.Evolution of magnetic domain structure of martensite in Ni-Mn-Ga films under the interplay of the temperature and magnetic field[J]. Chinese Physics B, 2014, 23(06): 068103.
[34] YANG Z P, TAN C L, GAO Z Y, et al.Effect of proton irradiation on microstructural and magnetic properties of ferromagnetic Ni-Mn-Ga thin films[J]. Thin Solid Films, 2017, 632: 10-16.
[35] YANG Z P, SUN B, GAO Z Y, et al.Surface modifications and tailoring magnetism in Ni_48.4Mn_28.8Ga_22.8 films by 120 keV proton irradiation[J]. Intermetallics, 2018, 98: 106-114.
[36] GOLUB V O, CHERNENKO V A, APOLINARIO A, et al.Negative Magnetoresistance in Nanotwinned NiMnGa Epitaxial Films[J]. Scientific Reports, 2018, 8(01): 15730.