常压化学气相沉积法制备二维六方氮化硼

曲靖师范学院学报 ›› 2017, Vol. 36 ›› Issue (3): 23-29.

常压化学气相沉积法制备二维六方氮化硼

姚茜, 陈珊珊^*

厦门大学物理科学与技术学院,福建厦门 361005

收稿日期:2017-03-10 出版日期:2017-05-26
通讯作者: 陈珊珊,厦门大学物理科学与技术学院教授,主要从事低维纳米材料制备与物性研究.
作者简介:姚茜,厦门大学物理科学与技术学院研究生,主要从事二维纳米材料制备研究.
基金资助:
福建省自然科学基金科技项目 “大面积石墨烯/六方氮化硼异质薄膜的制备及器件研究” (2015J06016)

Synthesis of Two-dimensional Hexagonal Boron Nitride by Atmospheric Pressure Chemical Vapor Deposition

Yao Qian, Chen Shanshan

College of Physical Science and Technology,Xiamen University,Xiamen Fujian, 361005, China

Received:2017-03-10 Published:2017-05-26

摘要/Abstract

摘要： 采用常压化学气相沉积(APCVD)法制备二维六方氮化硼的基本方法,系统探究衬底抛光处理、衬底与前驱体间距、前驱体加热温度、生长温度等对六方氮化硼生长的影响,通过优化调控生长因子,成功制备出高质量单层六方氮化硼薄膜.

关键词: 常压化学气相沉积, 六方氮化硼, 二维材料, 单原子层

Abstract: Atmospheric pressure chemical vapor deposition is one of the common ways of synthesizing two-dimensional h-BN. Various growth parameters including the electropolishing of metal substrate, the distance between substrate and precursor, the precursor heating temperature as well as the growth temperature are systematically studied to obtain a better understanding of the h-BN growth dynamics. High quality monolayer h-BN film is finally achieved through the optimized growth parameters.

Key words: atmospheric pressure chemical vapor deposition, hexagonal boron nitride, two-dimensional materials, atomic layer

中图分类号:

O484.1

姚茜, 陈珊珊. 常压化学气相沉积法制备二维六方氮化硼[J]. 曲靖师范学院学报, 2017, 36(3): 23-29.

Yao Qian, Chen Shanshan. Synthesis of Two-dimensional Hexagonal Boron Nitride by Atmospheric Pressure Chemical Vapor Deposition[J]. JOURNAL OF QUJING NORMAL UNIVERSITY, 2017, 36(3): 23-29.

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